Doi.org/10.1063/1.1855387
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Target Article[edit | edit source]
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP d-doped high electron mobility transistor ; Ching Sung Lee Wei Chou Hsu; NULL; 01/12/2005; https://doi.org/10.1063/1.1855387
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