Doi.org/10.1063/1.5024307
Revision as of 13:29, 4 August 2022 by 179.215.124.0 (talk) (Created page with "== Target Article == Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (~550char(39)cm2/V s) ; Chang Xu Hongmiao Gao Takayuki Sugino Masanobu Miyao Taizoh Sadoh; NULL; 06/11/2018; https://doi.org/10.1063/1.5024307 == Reasons == Note: Reasons not yet here included, but you are welcome to insert this information whenever you wish.")
Target Article[edit | edit source]
Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (~550char(39)cm2/V s) ; Chang Xu Hongmiao Gao Takayuki Sugino Masanobu Miyao Taizoh Sadoh; NULL; 06/11/2018; https://doi.org/10.1063/1.5024307
Reasons[edit | edit source]
Note: Reasons not yet here included, but you are welcome to insert this information whenever you wish.